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Strain induced composition profile in InGaN/GaN core-shell nanowires

Identifieur interne : 000041 ( Main/Repository ); précédent : 000040; suivant : 000042

Strain induced composition profile in InGaN/GaN core-shell nanowires

Auteurs : RBID : Pascal:14-0053599

Descripteurs français

Pascal (Inist)
- Distribution concentration, Méthode élément fini, Ségrégation, Energie déformation, Modèle 3 dimensions, Forme hexagonale, Forme triangulaire, Nitrure de gallium, Nitrure d'indium, Nanofil, InGaN, GaN, 6865, Structure coeur coquille.

English descriptors

KwdEn :
- Concentration distribution, Core shell structure, Finite element method, Gallium nitride, Hexagonal shape, Indium nitride, Nanowires, Segregation, Strain energy, Three dimensional model, Triangular shape.

Abstract

A theoretical investigation on explanation of the composition profile in triangular and hexagonal cross-sections of InGaN/GaN core-shell nanowires is presented by combining the finite elements method (FEM) and method of moving asymptotes (MMA) in the framework of thermodynamics. Our models can account for strain effect on indium composition. In both models, the maximum indium content through segregation arises either at the side length or at the corner of the InGaN shell. The simulated results are found in good agreement with those of experimental data, thus providing a good guidance for the growth of high indium concentration of InGaN/GaN core-shell nanowires.

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Pascal:14-0053599

Le document en format XML

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<author><name sortKey="Lu, P F" uniqKey="Lu P">P. F. Lu</name>
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<author><name sortKey="Sun, C" uniqKey="Sun C">C. Sun</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education, P.O. Box 72(BUPT)</s1>
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<author><name sortKey="Cao, H W" uniqKey="Cao H">H. W. Cao</name>
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<term>Indium nitride</term>
<term>Nanowires</term>
<term>Segregation</term>
<term>Strain energy</term>
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<term>Modèle 3 dimensions</term>
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<term>Nitrure d'indium</term>
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<front><div type="abstract" xml:lang="en">A theoretical investigation on explanation of the composition profile in triangular and hexagonal cross-sections of InGaN/GaN core-shell nanowires is presented by combining the finite elements method (FEM) and method of moving asymptotes (MMA) in the framework of thermodynamics. Our models can account for strain effect on indium composition. In both models, the maximum indium content through segregation arises either at the side length or at the corner of the InGaN shell. The simulated results are found in good agreement with those of experimental data, thus providing a good guidance for the growth of high indium concentration of InGaN/GaN core-shell nanowires.</div>
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Strain induced composition profile in InGaN/GaN core-shell nanowires

Strain induced composition profile in InGaN/GaN core-shell nanowires

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

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